PART |
Description |
Maker |
HN1B01F |
Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
TOSHIBA
|
2SC3423 E000845 |
From old datasheet system NPN EPITAXIAL TYPE (AUDIO FREQUENCY AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
2SC3665 |
NPN EPITAXIAL TYPE (AUDIO POWER, DRIVER STAGE AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
HN1B04FU HN1B04FUGR |
TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 50V V(BR)CEO | 150MA I(C) | TSOP Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
TOSHIBA
|
2SC342206 |
Silicon NPN Epitaxial Type (PCT Process) Audio Frequency Power Amplifier
|
Toshiba Semiconductor
|
2SC342306 2SC3423 |
Silicon NPN Epitaxial Type (PCT Process) Audio Frequency Amplifier Applications
|
Toshiba Semiconductor
|
2SC3112 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Audio Amplifier and Switching Applications
|
TOSHIBA
|
2SC2120 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Power Amplifier Applications
|
TOSHIBA
|
HN1B01FU |
Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
Toshiba Semiconductor
|
HN1B04F07 HN1B04F |
Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
Toshiba Semiconductor
|
2SC4944 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplefier Applications
|
TOSHIBA
|